技术参数

• Package / Case TO-220-3 Full Pack
• Mounting Type Through Hole
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 8.3A (Tc)
• Rds On (Max) @ Id, Vgs 650mOhm @ 5A, 10V
• Power Dissipation (Max) 2W (Ta), 35W (Tc)
• Vgs(th) (Max) @ Id 5V @ 1mA
• Supplier Device Package TO-220FI(LS)
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 500 V
• Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 30 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status Not applicable