技术参数

• Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting Type Surface Mount
• Operating Temperature 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 40A (Tc)
• Rds On (Max) @ Id, Vgs 23mOhm @ 20A, 10V
• Power Dissipation (Max) 1.8W (Ta), 66W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package TO-263
• Drain to Source Voltage (Vdss) 55 V
• Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant