技术参数

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 20A (Tc)
• Rds On (Max) @ Id, Vgs 178mOhm @ 10A, 10V
• Supplier Device Package TO-3PSG
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant