技术参数

• Package / Case 8-SOIC (0.173", 4.40mm Width)
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 15A (Ta)
• Rds On (Max) @ Id, Vgs 5.5mOhm @ 7.5A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package 8-PSOP
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant