技术参数

• Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting Type Through Hole
• Operating Temperature 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 80A (Tc)
• Rds On (Max) @ Id, Vgs 4.8mOhm @ 40A, 10V
• Power Dissipation (Max) 1.8W (Ta), 115W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package TO-262
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant