技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 3V @ 500mA, 1.5A
• DC Current Gain (hFE) (Min) @ Ic, Vce 9 @ 500mA, 2V
• Frequency - Transition 4MHz
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 1.5 A
• Voltage - Collector Emitter Breakdown (Max) 400 V
• Power - Max 1.1 W
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant