技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 2V
• Frequency - Transition 50MHz
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 700 mA
• Voltage - Collector Emitter Breakdown (Max) 60 V
• Power - Max 800 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status ROHS3 Compliant