技术参数

• Package / Case 4-XFBGA, WLCSP
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 4.7A (Ta)
• Rds On (Max) @ Id, Vgs 50mOhm @ 2A, 4.5V
• Power Dissipation (Max) 1.7W (Ta)
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package 4-WLCSP (1x1)
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status ROHS3 Compliant