技术参数

• Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
• Mounting Type Surface Mount
• Operating Temperature 175°C
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 40A (Tc)
• Rds On (Max) @ Id, Vgs 26mOhm @ 20A, 10V
• Power Dissipation (Max) 1.2W (Ta), 120W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package TO-252 (MP-3ZP)
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3150 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant