技术参数

• Package / Case TO-226-3, TO-92-3 Long Body
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V
• Frequency - Transition 120MHz
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 800 mA
• Voltage - Collector Emitter Breakdown (Max) 120 V
• Power - Max 900 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• RoHS Status ROHS3 Compliant