- 产品型号 AIDK12S65C5ATMA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 DISCRETE DIODES
- 分类 单二极管
-
PDF
- 库存 2480
定价:
- 1000 2.68
技术参数
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 363pF @ 1V, 1MHz
- Current - Average Rectified (Io) 12A
- Supplier Device Package PG-TO263-2
- Operating Temperature - Junction -40°C ~ 175°C
- Grade Automotive
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A
- Current - Reverse Leakage @ Vr 70 µA @ 650 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
