技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max) 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 6V
• Frequency - Transition 110MHz
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 50 mA
• Voltage - Collector Emitter Breakdown (Max) 120 V
• Power - Max 500 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected