- 产品型号 SCT3080ARC14
- 品牌 ROHM Semiconductor
- RoHS Yes
- 描述 SICFET N-CH 650V 30A TO247-4L
- 分类 单 FET、MOSFET
- 库存 1754
- 1 19.44
- 30 15.74
- 120 14.81
- 510 13.42
技术参数
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Rds On (Max) @ Id, Vgs 104mOhm @ 10A, 18V
- Power Dissipation (Max) 134W
- Vgs(th) (Max) @ Id 5.6V @ 5mA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -4V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 48 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 571 pF @ 500 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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