- 产品型号 FFSM0865A
- 品牌 Sanyo Semiconductor/onsemi
- RoHS Yes
- 描述 DIODE SIL CARB 650V 9.6A 4PQFN
- 分类 单二极管
-
PDF
- 库存 4500
定价:
- 3000 2.32
技术参数
- Package / Case 4-PowerTSFN
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 463pF @ 1V, 100kHz
- Current - Average Rectified (Io) 9.6A
- Supplier Device Package 4-PQFN (8x8)
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A
- Current - Reverse Leakage @ Vr 200 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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