• 产品型号 EM63B165TS-5ISG
  • 品牌 Etron Technology
  • RoHS Yes
  • 描述 IC DRAM 512MBIT PAR 54TSOP II
  • 分类 记忆
  • 库存 1500
定价:
  • 1000 6.48

技术参数

  • Package / Case 54-TSOP (0.400", 10.16mm Width)
  • Mounting Type Surface Mount
  • Memory Size 512Mbit
  • Memory Type Volatile
  • Operating Temperature -40°C ~ 85°C (TA)
  • Voltage - Supply 3V ~ 3.6V
  • Technology SDRAM
  • Clock Frequency 200 MHz
  • Memory Format DRAM
  • Supplier Device Package 54-TSOP II
  • Write Cycle Time - Word, Page 10ns
  • Memory Interface Parallel
  • Access Time 4.5 ns
  • Memory Organization 32M x 16
  • DigiKey Programmable Not Verified
  • ECCN EAR99
  • HTSUS 8542.32.0028
  • Moisture Sensitivity Level (MSL) 3 (168 Hours)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

相关产品


IC DRAM 512MBIT PAR 54TSOP II

库存: 1500

  • 1000: 6.34

IC DRAM 512MBIT PAR 54TSOP II

库存: 2732

  • 1: 11.78
  • 10: 10.91
  • 25: 10.66
  • 40: 10.6
  • 108: 9.33
  • 324: 8.87
  • 540: 8.78
  • 972: 8.49

IC DRAM 512MBIT PAR 54TSOP II

库存: 7513

  • 1: 12.94
  • 10: 11.99
  • 25: 11.72
  • 40: 11.65
  • 108: 10.26
  • 324: 9.75
  • 540: 9.65
  • 972: 9.33

IC FLASH 256MBIT SPI/QUAD 16SOIC

库存: 15709

  • 1: 3.21
  • 10: 2.89
  • 25: 2.84
  • 44: 2.84
  • 88: 2.53
  • 264: 2.45
  • 440: 2.44
  • 968: 2.27
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