技术参数

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 4.7A (Tc)
• Rds On (Max) @ Id, Vgs 350mOhm @ 2A, 18V
• Power Dissipation (Max) 60W (Tc)
• Vgs(th) (Max) @ Id 5.7V @ 1mA
• Supplier Device Package PG-TO247-4-1
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Vgs (Max) +23V, -7V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 182 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant