- 产品型号 IS43TR16256B-125KBL
- 品牌 ISSI (Integrated Silicon Solution, Inc.)
- RoHS Yes
- 描述 IC DRAM 4GBIT PARALLEL 96TWBGA
- 分类 记忆
-
PDF
- 库存 20310
定价:
- 1 7.43
- 10 6.84
- 25 6.69
- 40 6.67
- 190 5.99
- 380 5.8
- 570 5.52
- 950 5.33
技术参数
- Package / Case 96-TFBGA
- Mounting Type Surface Mount
- Memory Size 4Gbit
- Memory Type Volatile
- Operating Temperature 0°C ~ 95°C (TC)
- Voltage - Supply 1.425V ~ 1.575V
- Technology SDRAM - DDR3
- Clock Frequency 800 MHz
- Memory Format DRAM
- Supplier Device Package 96-TWBGA (9x13)
- Write Cycle Time - Word, Page 15ns
- Memory Interface Parallel
- Access Time 20 ns
- Memory Organization 256M x 16
- DigiKey Programmable Not Verified
- ECCN EAR99
- HTSUS 8542.32.0036
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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- 3000: 0.33
- 6000: 0.31
- 15000: 0.3
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IC DRAM 4GBIT PARALLEL 96TWBGA
库存: 1500
- 1500: 5.33
IC DRAM 4GBIT PAR 96FBGA
库存: 21124
- 1: 6.83
- 10: 6.28
- 25: 6.15
- 40: 6.13
- 80: 5.5
- 230: 5.33
- 440: 5.07
- 1224: 4.9
8G-BIT SLC NAND FLASH, 3V, 1-BIT
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- 1: 15.8
- 10: 14.63
- 25: 14.43
- 40: 14.25
- 96: 12.49
- 288: 11.95
- 480: 11.87
