- Product Model GB01SLT12-252
- Brand GeneSiC Semiconductor
- RoHS Yes
- Description DIODE SIL CARBIDE 1.2KV 1A TO252
- Categories Single Diodes
-
PDF
- In Stock 1500
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 69pF @ 1V, 1MHz
- Current - Average Rectified (Io) 1A
- Supplier Device Package TO-252
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 1200 V
- Voltage - Forward (Vf) (Max) @ If 1.8 V @ 1 A
- Current - Reverse Leakage @ Vr 2 µA @ 1200 V
- California Prop 65 California Prop 65 Information
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant
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