• In Stock 1583
Pricing:
  • 1 7.1

Technical Details

  • Package / Case TO-247-2
  • Mounting Type Through Hole
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 1200pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 60A
  • Supplier Device Package TO-247
  • Operating Temperature - Junction -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max) 700 V
  • Voltage - Forward (Vf) (Max) @ If 1.8 V @ 30 A
  • Current - Reverse Leakage @ Vr 200 µA @ 700 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


DIODE SIL CARB 650V 60A TO247-2

In Stock: 2074

  • 1: 11.6
  • 30: 9.39
  • 120: 8.84
  • 510: 8.01
  • 1020: 7.34

DIODE SIL CARBIDE 700V 50A TO247

In Stock: 1588

  • 1: 11.17

SICFET N-CH 700V 39A TO247-3

In Stock: 1511

  • 1: 9.64
Top