- Product Model IDH12G65C6XKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description DIODE SIL CARB 650V 27A TO220-2
- Categories Single Diodes
-
PDF
- In Stock 2082
- 1 5.17
- 50 4.09
- 100 3.51
- 500 3.12
- 1000 2.67
- 2000 2.52
Technical Details
- Package / Case TO-220-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 594pF @ 1V, 1MHz
- Current - Average Rectified (Io) 27A
- Supplier Device Package PG-TO220-2
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.35 V @ 12 A
- Current - Reverse Leakage @ Vr 40 µA @ 420 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
DIODE SIL CARB 650V 12A TO220-1
In Stock: 2014
- 1: 5.05
- 50: 4
- 100: 3.43
- 500: 3.05
- 1000: 2.61
- 2000: 2.46
DIODE SIL CARB 600V 12A TO220-1
In Stock: 3001
- 1: 6.17
- 50: 4.92
- 100: 4.41
- 500: 3.89
- 1000: 3.5
- 2000: 3.28
DIODE SIL CARB 650V 34A TO220-2
In Stock: 4669
- 1: 6.14
- 50: 4.86
- 100: 4.17
- 500: 3.71
- 1000: 3.17
- 2000: 2.99
DIODE SIL CARB 650V 41A TO220-2
In Stock: 3521
- 1: 7.66
- 50: 6.11
- 100: 5.47
- 500: 4.82
- 1000: 4.34
- 2000: 4.07
MOSFET N-CH 600V 50A TO247-4
In Stock: 2163
- 1: 12.49
- 30: 10.11
- 120: 9.52
- 510: 8.63
- 1020: 7.91
MOSFET N-CH 100V 195A TO247AC
In Stock: 1916
- 1: 8.61
- 25: 6.88
- 100: 6.15
IC MCU 32BIT 256KB FLSH 100LFQFP
In Stock: 1934
- 1: 7.31
- 10: 6.6
- 25: 6.29
- 90: 5.47
- 270: 5.22
- 450: 4.76
- 990: 4.15
- 2430: 3.99
