- Product Model IDH04G65C5XKSA2
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description DIODE SIL CARB 650V 4A TO220-2-1
- Categories Single Diodes
-
PDF
- In Stock 5931
- 1 1.97
- 50 1.59
- 100 1.3
- 500 1.1
- 1000 0.94
- 2000 0.89
- 5000 0.86
- 10000 0.83
Technical Details
- Package / Case TO-220-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 130pF @ 1V, 1MHz
- Current - Average Rectified (Io) 4A
- Supplier Device Package PG-TO220-2-1
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
- Current - Reverse Leakage @ Vr 70 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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