• In Stock 1942
Pricing:
  • 1 1.29
  • 50 1.04
  • 100 0.82
  • 500 0.7
  • 1000 0.57
  • 2000 0.53
  • 5000 0.51
  • 10000 0.48

Technical Details

  • Package / Case TO-220-3 Full Pack
  • Mounting Type Through Hole
  • Operating Temperature -40°C ~ 150°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 12.5A (Tc)
  • Rds On (Max) @ Id, Vgs 360mOhm @ 3A, 10V
  • Power Dissipation (Max) 26.4W (Tc)
  • Vgs(th) (Max) @ Id 3.5V @ 150µA
  • Supplier Device Package PG-TO220 Full Pack
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±16V
  • Drain to Source Voltage (Vdss) 700 V
  • Gate Charge (Qg) (Max) @ Vgs 16.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 517 pF @ 400 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


DIODE GEN PURP 100V 250MA SOD323

In Stock: 39476

  • 5000: 0.03
  • 10000: 0.02
  • 25000: 0.02
  • 50000: 0.02
  • 125000: 0.01

MOSFET N-CHANNEL 600V 18A TO220

In Stock: 2326

  • 1: 1.76
  • 50: 1.41
  • 100: 1.16
  • 500: 0.98
  • 1000: 0.83
  • 2000: 0.79
  • 5000: 0.76
  • 10000: 0.74

MOSFET N-CH 600V 9A TO220

In Stock: 5523

  • 1: 1.21
  • 50: 0.97
  • 100: 0.77
  • 500: 0.65
  • 1000: 0.53
  • 2000: 0.5
  • 5000: 0.48
  • 10000: 0.46

MOSFET N-CH 700V 10A TO220

In Stock: 1501

  • 1: 1.19

DIODE GEN PURP 600V 5A SMB

In Stock: 149394

  • 3000: 0.08
  • 6000: 0.07
  • 9000: 0.06
  • 30000: 0.06
  • 75000: 0.05
  • 150000: 0.05

MOSFET N-CH 600V 18A TO220

In Stock: 1605

  • 1: 3.4
  • 50: 2.69
  • 100: 2.31
  • 500: 2.05
  • 1000: 1.76
  • 2000: 1.65
  • 5000: 1.59
Top