• In Stock 1500
Pricing:
  • 1 20.3
  • 30 16.83
  • 120 15.78
  • 510 13.47

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 31A (Tc)
  • Rds On (Max) @ Id, Vgs 104mOhm @ 10A, 18V
  • Power Dissipation (Max) 165W (Tc)
  • Vgs(th) (Max) @ Id 5.6V @ 5mA
  • Supplier Device Package TO-247N
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Vgs (Max) +22V, -4V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 60 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 785 pF @ 800 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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