Technical Details

• Package / Case D-3 Module
• Mounting Type Chassis Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 25A (Tc)
• Rds On (Max) @ Id, Vgs 175mOhm @ 10A, 20V
• Power Dissipation (Max) 175W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package D3
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 72 nC @ 20 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected