- Product Model CSD19506KTT
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET N-CH 80V 200A DDPAK
- Categories Single FETs, MOSFETs
- In Stock 2039
- 500 2.97
- 1000 2.54
- 2500 2.39
Technical Details
- Package / Case TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 200A (Ta)
- Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
- Power Dissipation (Max) 375W (Tc)
- Vgs(th) (Max) @ Id 3.2V @ 250µA
- Supplier Device Package TO-263 (DDPAK-3)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 156 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 12200 pF @ 40 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 2 (1 Year)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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