- Product Model SPP11N80C3XKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 800V 11A TO220-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 4915
- 1 2.85
- 50 2.26
- 100 1.93
- 500 1.72
- 1000 1.47
- 2000 1.39
- 5000 1.33
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Rds On (Max) @ Id, Vgs 450mOhm @ 7.1A, 10V
- Power Dissipation (Max) 156W (Tc)
- Vgs(th) (Max) @ Id 3.9V @ 680µA
- Supplier Device Package PG-TO220-3-1
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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