- Product Model SPD08N50C3BTMA1
- Brand IR (Infineon Technologies)
- RoHS No
- Description MOSFET N-CH 560V 7.6A TO252-3
- Categories Single FETs, MOSFETs
-
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- In Stock 1500
Pricing:
- 2500 0.78
- 5000 0.75
- 12500 0.72
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
- Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
- Power Dissipation (Max) 83W (Tc)
- Vgs(th) (Max) @ Id 3.9V @ 350µA
- Supplier Device Package PG-TO252-3-11
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 560 V
- Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
