• In Stock 2732
Pricing:
  • 1000 7.11

Technical Details

  • Package / Case TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
  • Mounting Type Surface Mount
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 50A (Tc)
  • Rds On (Max) @ Id, Vgs 40mOhm @ 24.9A, 10V
  • Power Dissipation (Max) 227W (Tc)
  • Vgs(th) (Max) @ Id 4V @ 1.24mA
  • Supplier Device Package PG-TO263-3
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • Drain to Source Voltage (Vdss) 600 V
  • Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 400 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


MOSFET N-CH 600V 35A TO263-3

In Stock: 2393

  • 1000: 4.44
  • 2000: 4.16

MOSFET N-CH 600V 48A D2PAK

In Stock: 4326

  • 1000: 3.22
  • 2000: 3.03

MOSFET N-CH 600V 37A D2PAK

In Stock: 1500

  • 1000: 2.55
  • 2000: 2.4

MOSFET N-CH 600V 22A TO263-3

In Stock: 1500

  • 1000: 2.97
  • 2000: 2.8

MOSFET N-CH 600V 75A 8HSOF

In Stock: 3740

  • 2000: 9.68

TRANS 2PNP 45V 0.1A SC88/SC70-6

In Stock: 11133

  • 3000: 0.15
  • 6000: 0.14
  • 9000: 0.13
  • 30000: 0.13
  • 75000: 0.13

SILICON CARBIDE (SIC) MOSFET - 1

In Stock: 3830

  • 800: 13.7

MOSFET N-CH 200V 64A D2PAK

In Stock: 1500

  • 800: 1.46
  • 1600: 1.24
  • 2400: 1.18
  • 5600: 1.13
Top