- Product Model VS-1EFU06-M3/I
- Brand Vishay General Semiconductor – Diodes Division
- RoHS Yes
- Description DIODE GEN PURP 600V 1A DO219AB
- Categories Single Diodes
-
PDF
- In Stock 54722
- 10000 0.08
- 30000 0.08
- 50000 0.07
- 100000 0.07
Technical Details
- Package / Case DO-219AB
- Mounting Type Surface Mount
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 32 ns
- Technology Standard
- Current - Average Rectified (Io) 1A
- Supplier Device Package DO-219AB (SMF)
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 600 V
- Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A
- Current - Reverse Leakage @ Vr 3 µA @ 600 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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