- Product Model AS4C16M16SA-6TAN
- Brand Alliance Memory, Inc.
- RoHS Yes
- Description IC DRAM 256MBIT PAR 54TSOP II
- Categories Memory
-
PDF
- In Stock 1982
- 1 6.47
- 10 5.9
- 25 5.79
- 40 5.75
- 108 5.16
- 324 5.14
- 540 4.81
- 972 4.61
Technical Details
- Package / Case 54-TSOP (0.400", 10.16mm Width)
- Mounting Type Surface Mount
- Memory Size 256Mbit
- Memory Type Volatile
- Operating Temperature -40°C ~ 105°C (TA)
- Voltage - Supply 3V ~ 3.6V
- Technology SDRAM
- Clock Frequency 166 MHz
- Memory Format DRAM
- Supplier Device Package 54-TSOP II
- Grade Automotive
- Write Cycle Time - Word, Page 12ns
- Memory Interface Parallel
- Access Time 5 ns
- Memory Organization 16M x 16
- DigiKey Programmable Not Verified
- Qualification AEC-Q100
- California Prop 65 California Prop 65 Information
- ECCN EAR99
- HTSUS 8542.32.0024
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
IC DRAM 256MBIT PAR 54TFBGA
In Stock: 6522
- 1: 6.36
- 10: 5.81
- 25: 5.7
- 40: 5.65
- 80: 5.07
- 348: 5.05
- 696: 4.74
- 1044: 4.54
IC DRAM 256MBIT PAR 54TSOP II
In Stock: 1500
- 1000: 4.69
IC DRAM 256MBIT PAR 54TSOP II
In Stock: 27700
- 1: 5.09
- 10: 4.62
- 25: 4.52
- 40: 4.49
- 108: 4.03
- 324: 4.01
- 540: 3.87
- 972: 3.68
IC EEPROM 64KBIT SPI 8TSSOP
In Stock: 16521
- 4000: 0.51
- 8000: 0.51
- 12000: 0.49
IC DRAM 256MBIT PAR 54TSOP II
In Stock: 3322
- 1000: 2.74
- 2000: 2.71
- 3000: 2.6
DIODE SCHOTTKY 100V 2A SOD123W
In Stock: 60298
- 3000: 0.09
- 6000: 0.09
- 9000: 0.08
- 30000: 0.08
- 75000: 0.07
- 150000: 0.06
IC DRAM 256MBIT PAR 54TSOP II
In Stock: 1500
- 1: 2.31
- 10: 2.08
- 25: 2.05
- 40: 2.04
- 108: 1.83
- 324: 1.77
- 540: 1.76
- 972: 1.64
- 4968: 1.48
IC DRAM 256MBIT PAR 54TSOP II
In Stock: 3755
- 1000: 2.07
- 2000: 2.03
- 3000: 2.01
- 5000: 1.87
