- Product Model MSE1PJHM3J/89A
- Brand Vishay General Semiconductor – Diodes Division
- RoHS Yes
- Description DIODE GEN PURP 600V 1A MICROSMP
- Categories Single Diodes
-
PDF
- In Stock 26825
Pricing:
- 4500 0.5
- 9000 0.46
Technical Details
- Package / Case DO-219AD
- Mounting Type Surface Mount
- Speed Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 780 ns
- Technology Standard
- Capacitance @ Vr, F 5pF @ 4V, 1MHz
- Current - Average Rectified (Io) 1A
- Supplier Device Package DO-219AD (MicroSMP)
- Operating Temperature - Junction -55°C ~ 175°C
- Grade Automotive
- Voltage - DC Reverse (Vr) (Max) 600 V
- Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
- Current - Reverse Leakage @ Vr 1 µA @ 600 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
DIODE GEN PURP 75V 150MA SOD323
In Stock: 330890
- 3000: 0.03
- 6000: 0.03
- 9000: 0.02
- 30000: 0.02
- 75000: 0.02
- 150000: 0.02
DIODE GEN PURP 600V 1A MICROSMP
In Stock: 71965
- 4500: 0.05
- 9000: 0.04
DIODE GEN PURP 600V 1A MICROSMP
In Stock: 11815
- 4500: 0.5
- 9000: 0.46
