- Product Model FDS6670A
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 30V 13A 8SOIC
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 5288
- 2500 0.35
- 5000 0.33
- 12500 0.31
- 25000 0.3
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 13A (Ta)
- Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V
- Power Dissipation (Max) 2.5W (Ta)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package 8-SOIC
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 30 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 15 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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