- Product Model MT46V32M16P-5B:J TR
- Brand Micron Technology
- RoHS Yes
- Description IC DRAM 512MBIT PARALLEL 66TSOP
- Categories Memory
-
PDF
- In Stock 6101
- 2000 4.15
Technical Details
- Package / Case 66-TSSOP (0.400", 10.16mm Width)
- Mounting Type Surface Mount
- Memory Size 512Mbit
- Memory Type Volatile
- Operating Temperature 0°C ~ 70°C (TA)
- Voltage - Supply 2.5V ~ 2.7V
- Technology SDRAM - DDR
- Clock Frequency 200 MHz
- Memory Format DRAM
- Supplier Device Package 66-TSOP
- Write Cycle Time - Word, Page 15ns
- Memory Interface Parallel
- Access Time 700 ps
- Memory Organization 32M x 16
- DigiKey Programmable Not Verified
- ECCN EAR99
- HTSUS 8542.32.0036
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
IC DRAM 512MBIT PAR 66TSOP II
In Stock: 2753
- 1: 5.11
- 10: 4.66
- 25: 4.57
- 40: 4.54
- 108: 4.08
- 324: 4.06
- 540: 3.81
- 972: 3.64
MOSFET N-CH 55V 56A DPAK
In Stock: 64439
- 2000: 0.59
- 6000: 0.57
- 10000: 0.54
IC DRAM 512MBIT PAR 54TSOP II
In Stock: 2732
- 1: 11.78
- 10: 10.91
- 25: 10.66
- 40: 10.6
- 108: 9.33
- 324: 8.87
- 540: 8.78
- 972: 8.49
IC DRAM 512MBIT PAR 66TSOP II
In Stock: 1827
- 1: 3.94
- 10: 3.58
- 25: 3.5
- 40: 3.48
- 108: 3.12
- 324: 3.11
- 540: 3
- 972: 2.85
IC FLASH 1GBIT PARALLEL 48TSOP I
In Stock: 11656
- 1000: 2.1
- 2000: 2.07
- 3000: 2.04
- 5000: 1.9
IC DRAM 2GBIT PARALLEL 96FBGA
In Stock: 6422
- 2000: 3.74
IC DRAM 512MBIT PARALLEL 66TSOP
In Stock: 2212
- 1: 6.67
- 10: 6.09
- 25: 5.98
- 40: 5.93
- 80: 5.32
- 230: 5.3
- 440: 4.97
- 1080: 4.76
IC DRAM 512MBIT PARALLEL 66TSOP
In Stock: 1797
- 1: 6.01
- 10: 5.48
- 25: 5.38
- 40: 5.34
- 80: 4.79
- 230: 4.77
- 440: 4.47
- 1080: 4.28
IC DRAM 512MBIT PAR 84VFBGA
In Stock: 24399
- 1: 1.72
- 10: 1.54
- 25: 1.52
- 40: 1.52
- 209: 1.4
