- Product Model IPD50P04P4L11ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET P-CH 40V 50A TO252-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1509
- 2500 0.57
- 5000 0.54
- 12500 0.52
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Rds On (Max) @ Id, Vgs 10.6mOhm @ 50A, 10V
- Power Dissipation (Max) 58W (Tc)
- Vgs(th) (Max) @ Id 2.2V @ 85µA
- Supplier Device Package PG-TO252-3-313
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±16V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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