• In Stock 1500
Pricing:
  • 1 9.31
  • 50 7.43
  • 100 6.65
  • 500 5.87
  • 1000 5.28
  • 2000 4.95

Technical Details

  • Package / Case TO-220-3 Full Pack
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 42A (Tc)
  • Rds On (Max) @ Id, Vgs 63mOhm @ 21A, 10V
  • Power Dissipation (Max) 40W (Tc)
  • Vgs(th) (Max) @ Id 5V @ 250µA
  • Supplier Device Package TO-220FP
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±25V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 100 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


MOSFET N-CH 650V 44A TO220F

In Stock: 2393

  • 1: 6.61
  • 50: 5.27
  • 100: 4.72
  • 500: 4.16
  • 1000: 3.75
  • 2000: 3.51

MOSFET N-CHANNEL 600V 48A TO220

In Stock: 1973

  • 1: 6.23
  • 50: 4.94
  • 100: 4.23
  • 500: 3.76
  • 1000: 3.22
  • 2000: 3.03

DIODE GEN PURP 300V 1A SMA

In Stock: 1500

  • 5000: 0.07
  • 10000: 0.06
  • 25000: 0.06
  • 50000: 0.05
  • 125000: 0.04

DIODE GEN PURP 1KV 1A SMA

In Stock: 1660

  • 5000: 0.07
  • 10000: 0.06
  • 25000: 0.06
  • 50000: 0.05
  • 125000: 0.05

DIODE SCHOTTKY 200V 4A SMC

In Stock: 1500

  • 2500: 0.76
  • 5000: 0.73
  • 12500: 0.7

DIODE GEN PURP 1KV 3A SMC

In Stock: 1500

DIODE SMC 1000V 3A 150C

In Stock: 145834

  • 3000: 0.14
  • 6000: 0.13
  • 9000: 0.12
  • 30000: 0.12
  • 75000: 0.12

DIODE GEN PURP 1KV 3A SMC

In Stock: 1500

  • 1: 0.09

DIODE GEN PURP 3A DO214AB

In Stock: 4418

  • 3000: 0.11
  • 6000: 0.11
  • 9000: 0.1
  • 30000: 0.1
  • 75000: 0.09

DIODE GEN PURP 1000V 3A SMC

In Stock: 3769

  • 3000: 0.06
  • 6000: 0.05
  • 9000: 0.04
  • 30000: 0.04
  • 75000: 0.04
  • 150000: 0.03
Top