Technical Details

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 30A (Ta), 50A (Tc)
• Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V
• Power Dissipation (Max) 6.2W (Ta), 83W (Tc)
• Vgs(th) (Max) @ Id 1.2V @ 250µA
• Supplier Device Package 8-DFN-EP (3.3x3.3)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 4550 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant