- Product Model BY25Q40BSMIG(R)
- Brand BYTe Semiconductor
- RoHS Yes
- Description 4 MBIT, 3.0V (2.7V TO 3.6V), -40
- Categories Memory
-
PDF
- In Stock 31500
Pricing:
- 3000 0.16
- 6000 0.15
- 15000 0.14
- 30000 0.13
- 75000 0.13
Technical Details
- Package / Case 8-UFDFN Exposed Pad
- Mounting Type Surface Mount
- Memory Size 4Mbit
- Memory Type Non-Volatile
- Operating Temperature -40°C ~ 85°C (TA)
- Voltage - Supply 2.7V ~ 3.6V
- Technology FLASH - NOR (SLC)
- Clock Frequency 108 MHz
- Memory Format FLASH
- Supplier Device Package 8-USON (2x3)
- Write Cycle Time - Word, Page 50µs, 2.4ms
- Memory Interface SPI - Quad I/O, QPI
- Access Time 7 ns
- Memory Organization 512K x 8
- HTSUS 8542.32.0071
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- RoHS Status ROHS3 Compliant
