- Product Model NTH4L030N120M3S
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SILICON CARBIDE (SIC) MOSFET EL
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1799
- 1 17.74
- 30 14.36
- 120 13.52
- 510 12.25
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 73A (Tc)
- Rds On (Max) @ Id, Vgs 39mOhm @ 30A, 18V
- Power Dissipation (Max) 313W (Tc)
- Vgs(th) (Max) @ Id 4.4V @ 15mA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 107 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2430 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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