Technical Details

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 36A
• Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
• Power Dissipation (Max) 198W
• Vgs(th) (Max) @ Id 3.8V @ 100µA
• Supplier Device Package PG-TO247-3
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 2.8V
• Vgs (Max) +25V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 60 nC @ 600 V
• Input Capacitance (Ciss) (Max) @ Vds 1001 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status RoHS Compliant