Technical Details

• Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 8.1A (Tc)
• Rds On (Max) @ Id, Vgs 233.9mOhm @ 3A, 18V
• Power Dissipation (Max) 80W (Tc)
• Vgs(th) (Max) @ Id 5.1V @ 900µA
• Supplier Device Package PG-TO263-7-12
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Vgs (Max) +20V, -7V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 7.9 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant