- Product Model SIR5607DP-T1-RE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description P-CHANNEL 60 V (D-S) MOSFET POWE
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1500
- 3000 1.24
- 6000 1.19
Technical Details
- Package / Case PowerPAK® SO-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 22.2A (Ta), 90.9A (Tc)
- Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V
- Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
- Vgs(th) (Max) @ Id 2.6V @ 250µA
- Supplier Device Package PowerPAK® SO-8
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5020 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant
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