• In Stock 1527
Pricing:
  • 1 19.68
  • 30 15.93
  • 120 15
  • 510 13.59

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiC (Silicon Carbide Junction Transistor)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 40A (Tc)
  • Rds On (Max) @ Id, Vgs 97.5mOhm @ 20A, 15V
  • Power Dissipation (Max) 235W (Tc)
  • Vgs(th) (Max) @ Id 3.5V @ 5mA
  • Supplier Device Package TO-247-4
  • Grade Automotive
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +19V, -8V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 47.6 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 1112 pF @ 1000 V
  • Qualification AEC-Q101
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


1200V COOLSIC MOSFET PG-TO247-3

In Stock: 1672

  • 1: 35.38
  • 30: 29.33
  • 120: 27.5

SIC MOSFET BVDSS: >1000V TO247-4

In Stock: 1550

  • 1: 34.48
  • 30: 28.59
  • 120: 26.8

SIC, MOSFET, 40M, 1200V, TO-247-

In Stock: 1816

  • 1: 23.31
  • 30: 19.33
  • 120: 18.12
  • 510: 15.46

SIC MOSFET 1200V 40M TO-247-3L

In Stock: 1561

  • 1: 20.04
  • 30: 16.23
  • 120: 15.27
  • 510: 13.84

SIC DISCRETE

In Stock: 1507

  • 1: 18.31
  • 30: 14.83
  • 120: 13.95
  • 510: 12.64

N-CHANNEL MOSFET,TO-247-4

In Stock: 1838

  • 1: 16.58
  • 10: 14.61
  • 360: 12.24
  • 720: 11.45

1200V/30MOHM SIC STACKED FAST CA

In Stock: 2872

  • 1: 24.64
  • 30: 20.43
  • 120: 19.15
  • 510: 16.34
Top