- Product Model G080N10M
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET N-CH 100V 180A TO-263
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2480
- 1000 0.91
- 2000 0.86
- 5000 0.83
- 10000 0.8
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 180A (Tc)
- Rds On (Max) @ Id, Vgs 7.5mOhm @ 30A, 10V
- Power Dissipation (Max) 370W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package TO-263
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 107 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 13950 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant
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