• In Stock 1500
Pricing:
  • 1 19.58
  • 30 15.85
  • 120 14.92
  • 510 13.52

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -40°C ~ 175°C (TJ)
  • Technology SiC (Silicon Carbide Junction Transistor)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 46A (Tc)
  • Rds On (Max) @ Id, Vgs 60mOhm @ 17.6A, 15V
  • Power Dissipation (Max) 150W (Tc)
  • Vgs(th) (Max) @ Id 3.6V @ 4.84mA
  • Supplier Device Package TO-247-4L
  • Grade Automotive
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +19V, -8V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 64 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 1593 pF @ 400 V
  • Qualification AEC-Q101
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Affected
  • RoHS Status ROHS3 Compliant

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