- Product Model STW65N023M9-4
- Brand STMicroelectronics
- RoHS Yes
- Description N-CHANNEL 650 V, 19.9 MOHM TYP.,
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1564
- 1 20.47
- 30 16.97
- 120 15.91
- 510 13.57
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 95A (Tc)
- Rds On (Max) @ Id, Vgs 23mOhm @ 48A, 10V
- Power Dissipation (Max) 463W (Tc)
- Vgs(th) (Max) @ Id 4.2V @ 250µA
- Supplier Device Package TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 8844 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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