- Product Model GT035N10T
- Brand Goford Semiconductor
- RoHS Yes
- Description N100V,190A,RD<3.5M@10V,VTH2.0V~4
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1558
- 1 2.71
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 190A (Tc)
- Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 10V
- Power Dissipation (Max) 250W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6057 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0000
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant
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