- Product Model G900P15D5
- Brand Goford Semiconductor
- RoHS Yes
- Description P-150V,-60A,RD(MAX)<80M@-10V,VTH
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 3399
- 5000 0.62
- 10000 0.59
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Rds On (Max) @ Id, Vgs 80mOhm @ 5A, 10V
- Power Dissipation (Max) 100W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package 8-DFN (4.9x5.75)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4050 pF @ 75 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant
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