- Product Model WNSC5D04650X6Q
- Brand WeEn Semiconductors Co., Ltd
- RoHS No
- Description DIODE SIL CARBIDE 650V 4A TO220F
- Categories Single Diodes
- In Stock 1500
Technical Details
- Package / Case TO-220-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 138pF @ 1V, 1MHz
- Current - Average Rectified (Io) 4A
- Supplier Device Package TO-220AC
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
- Current - Reverse Leakage @ Vr 20 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
