• In Stock 2295
Pricing:
  • 800 17.17

Technical Details

  • Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Mounting Type Surface Mount
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 58A (Tc)
  • Rds On (Max) @ Id, Vgs 30mOhm @ 40A, 18V
  • Power Dissipation (Max) 234W (Tc)
  • Vgs(th) (Max) @ Id 4.4V @ 20mA
  • Supplier Device Package D2PAK-7
  • Grade Automotive
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 148 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 800 V
  • Qualification AEC-Q101
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


SIC DISCRETE

In Stock: 1500

  • 1: 41.55
  • 30: 34.82
  • 120: 32.49

SIC MOSFET 1200 V 14 MOHM M3P SE

In Stock: 2001

  • 800: 19.23

SIC MOSFET 1200 V 22 MOHM M3S SE

In Stock: 2128

  • 800: 12.63

SIC MOSFET 1200 V 14 MOHM M3P SE

In Stock: 1689

  • 1: 28.94
  • 10: 25.72
  • 450: 19.19

SIC MOS TO247-3L 70MOHM 1200V M3

In Stock: 1541

  • 1: 10.37
  • 30: 8.28
  • 120: 7.41
  • 510: 6.53
  • 1020: 5.88

SIC MOS D2PAK-7L 650V

In Stock: 2207

  • 800: 47.41

SIC MOS D2PAK-7L 650V

In Stock: 2300

  • 800: 31.77

SICFET N-CH 1200V 30A D2PAK-7

In Stock: 2126

  • 800: 10.22

SICFET N-CH 1200V 19.5A D2PAK

In Stock: 1924

  • 800: 7.21

SICFET N-CH 650V 33A H2PAK-7

In Stock: 1500

  • 1000: 12.86
Top