Technical Details

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Operating Temperature -65°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 300mA (Tc)
• Rds On (Max) @ Id, Vgs 1.7Ohm @ 1A, 10V
• Power Dissipation (Max) 800mW (Ta)
• Vgs(th) (Max) @ Id 3.5V @ 1mA
• Supplier Device Package SOT-223 (TO-261)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 3.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 65 pF @ 25 V